Our technology to enable innovation worldwide

LFoundry is supporting own technology IP for 150nm and 110nm with a large portfolio of process-proven libraries, IP, design tools and reference flows. This is Our technology to enable innovation worldwide.

Technology Portfolio

Designing complete systems today for the worldwide markets of tomorrow requires the correct identification, the efficient incorporation and the absolute protection of critical, reusable and fundamental intellectual property building blocks.
Every day, LFoundry demonstrates its flexibility. Company engineers meet with their customer's counterparts to decide whether to use customer IP exclusively, import third-party IP or to integrate LFoundry IP into a system-level design.

LFoundry Technology 150nm

0.15μm high performance (automotive grade, radiation hard) analog, mixed-signal process for a wide field of different applications, including high voltage and various sensor (Opto, MEMS) SoC enabling technologies.

Process for complex AMS products:
  • 4-6 Metal (Al.)
  • 1.8V MOS high speed
  • 1.8V MOS low leak
  • 3.3V MOS
  • 5V MOS
  • high poly resistor
  • MIM 1fF, 2fF
C-MEMS:
  • Temp. Sensor
  • Gas Sensor
  • Energy Harvester
High Voltage LDMOS power metal:
  • Integrated Power
  • MT power metal
  • LDMOS (up to 60V)
  • LDMOS2.0 & IGBT (>80V up to 800V)

Step

Process

Isolation

STI with mini LOCOS

Channel

Retrograde Implants with HE

Gate Oxides

1.8V – 3.3V – 5.0V

Gate

Salicided polysilicon (150nm)

Spacer

Oxide

Salicide

CoSi2 with salicide block

Contact&vias

Tungsten

Metals

Up to 6 Aluminum + MT(Inductors)

Passivation

Polymide

LFoundry Technology 110nm

The focus of the 0,11µm technology is in the low power and high speed area for analog, mixed-signal products with higher digital rate based on its 1.2V core.

Process for high density digital products:
  • 4-6 Metal (Al. or Cu.)
  • 1.2V MOS (low, regular, high)
  • 1.8V MOS (inside Flash)
  • 3.3V MOS
  • 5/6V MOS
  • 32V MOS
  • high poly resistor
  • MIM 1fF, 2fF, >4fF
Memory:
  • Advanced Memory
  • high quality Flash SST ESF-3 (500k W/E)
  • low mask count Flash based on SST ESF-1

Step

Process

Isolation

STI

Channel

Retrograde Implants with HE

Gate Oxides

1.2V – 3.3V – 5/6V – 32V

Gate

Salicided polysilicon (110nm)

Spacer

Oxide L-shape

Salicide

CoSi2 with salicide block

Contact&vias

Tungsten

Metals

Up to 6 Alu / Copper

Litho

Down to 193nm ArF