Working in LFoundry means contributing to innovation in the world and to technological and social growth in Europe. We develop and build day by day what's not there: technologies that allow development in the most important areas for man, automotive, medical imaging, until the internet of things (IoT), paying attention to environmental sustainability and responsibility towards the territory.
Every person in LFoundry is unique in its exclusivity, is embedded in an environment both challenging and collaborative and takes part in making LFoundry a heritage of distinctive knowledge and skills. The osmosis between the individual's contribution and the long-standing semiconductor business experience, makes LFoundry a place to learn quickly, touching silicon, the heart of global innovation.
For this reason, the company takes care to the well-being of each person by providing a satisfactory work-life balance, a broad personalized benefit plan, professional growth opportunities and a wage aligned with the best national standards.
Our sites are located in places far from the stress of the great metropolis and surrounded by nature, which we care to defend and protect supporting many projects of an environmental and social character.
Join the LFoundry team and contribute to the innovative solutions that bring our customers’ ideas to life.
You can help LFoundry to shape innovation on a global scale by working to make our customers’ visions a reality, no matter how big the challenge is.
Work with us and become an essential player, transforming innovation into reality.
The person will take care of the following main activities under the direct responsibility of his/her supervisor:
The person will support the LFoundry Communication Manager and Recruiting Manager for the following activities:
Ion implantation is one of the main techniques for selective doping of semiconductors, as it provides good control on dopant concentration and profile. However, the implantation process damages the crystal structure even leading to total amorphization depending on the type of ion and implantation conditions. Post implantation annealing treatments are necessary to achieve lattice recovery and electric activation of the dopants. Residual defects concentrations after annealing process could still be detrimental for some kind of devices such as CMOS Imager Sensor (CIS). For these reason one of the main topics for improve CIS performances is to fully characterize the Photodiode implantation processes in terms of residual lattice defect and species activation. Therefore, Raman scattering emerges as the most useful nondestructive technique to assess lattice recovery with capability of monitoring and characterizingApply for position
A part of the program of the SPC Control Methodology revamp, we need support to analyze and assess the current Control Limits and Out of Control Alarms setup on SPC charts.Apply for position
In LFoundry the Planning team use a Micron S/W (PDM) to elaborate fab capacity scenarios in order to evaluate the feasibility to accept new customer demands.
A capacity scenario computation is based on production data coming from MES (Manufacturing Execution Systems) , like product cycle time, equipment availability, equipment constraints, equipment throughput ,number and mix of products in line.
Since Lfoundry is working to replace the current MES with a new third party software provided by Eyelit , there is the need to reengineering the current planning business
System to either align it to the new third part s/w and to new business needs.
LFoundry is working to replace Manufacturing Execution Systems with a new third party software provided by Eyelit. We should aggregate business requirements elaborating a new logic for data presentation.Apply for position
Optical performances of CMOS imagers can be affected by contamination caused by several elements found, even if in extremely low concentration, in semiconductor production environment.
In particular, contamination by noble elements like, for example, Gold or Silver, is extremely critical since these elements have a very low migration rate in the silicon, so they are not easily segregated into the gettering sites. They remain electrically active, and contribute to the so called “hot pixel” defects.
Unfortunately, the noble elements are also very difficult to be effectively detected by VPD/ICP-MS, the technique traditionally and successfully used to detect most of the other elements (like Fe, Cr, Ni, Na, Ca...).
In fact, the chemical mixtures typically used to dissolve noble metals (like Aqua Regia) are very aggressive to the silicon substrate as well, damaging the wafer surface and making recovery by the automated equipment used for this technique (VPD) very difficult and not reliable.
In order to allow the implementation of routine analysis for the full elemental range of interest, alternative chemistries should be defined (through theoretical modeling and analytical test confirmation), capable to assure acceptable analytical recovery for noble elements and the other common elements at same time.
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